| PART |
Description |
Maker |
| 2SD2248 |
NPN EPITAXIAL TYPE (HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS FOR INDUCTIVE LOAD DRIVE)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SD2248 |
Transistor Silicon NPN Epitaxial Type (Darlington power transistor) Hammer Drive, Pulse Motor Drive Applications For Inductive Load Drive
|
TOSHIBA
|
| 2SK296802 2SK2968 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Relay Drive, DC .DC Converter and Motor Drive Applications
DC−DC Converter, Relay Drive and Motor Drive Applications
|
Toshiba Semiconductor
|
| PAK-II |
310 Ivy Glen Court
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| 2N7002PW115 2N7002PW |
60 V, 310 mA N-channel Trench MOSFET
|
NXP Semiconductors N.V.
|
| 2798 |
Phone Plug (WE 310) To BNC Female Adapter
|
Pomona Electronics
|
| TB0468A |
IF SAW Filter 310 MHz (SMD 5.0mmX5.0mm)
|
TAI-SAW TECHNOLOGY CO., LTD.
|
| NX5312_06 NX5312 NX5312EH-AZ NX5312EK-AZ NX531206 |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
|
CEL[California Eastern Labs]
|
| NX8341_06 NX8341 NX8341TB-AZ NX8341TJ-AZ NX8341TL- |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
CEL[California Eastern Labs]
|
| C380X500 C380BX500 C380DX500 C380MX500 C380PBX500 |
Phase Control SCR 310 Amperes Avg 1600 Volts
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
|
| NX5315EH_06 NX5315EH NX5315EH-AZ NX5315EH06 |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
CEL[California Eastern Labs]
|
